Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques

The paper presents original experimental results related to the study of the effect of annealing on the crystal structure of the surface of silicon doped with cobalt ions. The findings of research on CoSi2/Si(100) epitaxial structures formed by molecular beam epitaxy (MBE), solid phase epitaxy (SPE), and other techniques are presented. It has been established that there are relationships between the morphology, stoichiometry, and growth conditions of CoSi2/ Si structures. The Auger profile of the sample was used to determine the ratios of the intensities of Auger signals of cobalt and silicon in the CoSi2 layer, as well as silicon in CoSi2 and silicon substrate. Authors support the claim that under certain heat treatment conditions, due to radiation of the surface of a single crystal, so-called epitaxial silicides are formed, which can play the role of conductive layers or metal coated layers. The structural state diagrams of CoSi2/Si (100) thin-film systems formed by MBE, SSE, and other methods have been compiled.